Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors

Author

Ritter, D. ; Sheinman, E. ; Sidorov, Y. ; Cohen, S. ; Gavrilov, A. ; Vered, Y. ; Zohar, G. ; Lasri, J.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2002

fDate

5-8 Nov. 2002

Firstpage

337

Lastpage

340

Abstract

The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap engineering, and the proper grading of the base emitter and base collector junctions.

Keywords

III-V semiconductors; epitaxial growth; gallium compounds; heterojunction bipolar transistors; indium compounds; optimisation; p-i-n photodiodes; photodetectors; phototransistors; semiconductor device measurement; HBT optimization; InP-GaInAs; InP/GaInAs HBT; band gap engineering; base collector junctions; base emitter junction grading; base transit time; epitaxy; heterojunction bipolar transistors; monolithic integration; p-i-n photodetectors; photodiodes; phototransistors; transistor frequency performance; Epitaxial growth; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Optimization methods; Photodetectors; Phototransistors; p-i-n photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2002. International Topical Meeting on

Print_ISBN

4-88552-187-4

Type

conf

DOI

10.1109/MWP.2002.1158932

Filename

1158932