Title :
Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors
Author :
Ritter, D. ; Sheinman, E. ; Sidorov, Y. ; Cohen, S. ; Gavrilov, A. ; Vered, Y. ; Zohar, G. ; Lasri, J.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap engineering, and the proper grading of the base emitter and base collector junctions.
Keywords :
III-V semiconductors; epitaxial growth; gallium compounds; heterojunction bipolar transistors; indium compounds; optimisation; p-i-n photodiodes; photodetectors; phototransistors; semiconductor device measurement; HBT optimization; InP-GaInAs; InP/GaInAs HBT; band gap engineering; base collector junctions; base emitter junction grading; base transit time; epitaxy; heterojunction bipolar transistors; monolithic integration; p-i-n photodetectors; photodiodes; phototransistors; transistor frequency performance; Epitaxial growth; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Optimization methods; Photodetectors; Phototransistors; p-i-n photodiodes;
Conference_Titel :
Microwave Photonics, 2002. International Topical Meeting on
Print_ISBN :
4-88552-187-4
DOI :
10.1109/MWP.2002.1158932
