Title :
Charge collection studies of SOI diodes
Author :
Colladant, T. ; Ferlet-Cavrois, V. ; Musseau, O. ; L´Hoir, A. ; Campbell, A.B. ; Buchner, S. ; Knudson, A. ; McMorrow, D. ; Fischer, B. ; Schlögl, M. ; Lewis, D.
Author_Institution :
Groupe de Phys. des Solides, Univ. Paris 6 - 7, France
Abstract :
Charge collection measurements on SOI diodes have been performed with heavy ion microbeam and pulsed focused laser. Both irradiation techniques show that no electrical coupling occurs. However laser measurements show an optical coupling effect when irradiation occurs close to the isolation trench. Qualitative electromagnetic simulations have been performed to confirm and describe the optical coupling.
Keywords :
ion beam effects; laser beam effects; semiconductor device measurement; semiconductor device models; semiconductor diodes; silicon-on-insulator; SOI diodes; Si-SiO2; charge collection; heavy ion microbeam irradiation; optical coupling effect; pulsed focused laser irradiation; qualitative electromagnetic simulations; Charge measurement; Couplings; Current measurement; Insulation life; Performance evaluation; Pulse measurements; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Substrates;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159262
