Title :
Defects produced by medium energy proton bombardment of MOS devices
Author :
Lenahan, P.M. ; Mishima, T.D. ; Jumper, J.B. ; Fogarty, T.N. ; Marrero, M. ; Cruz, L. ; Shojah-Ardalan, S. ; Dwivedi, R. ; Wilkins, R. ; Trombetta, L.P. ; Singh, C.
Author_Institution :
Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
Abstract :
We report results of very sensitive electron spin resonance (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of 60Co gamma rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.
Keywords :
MOSFET; paramagnetic resonance; proton effects; semiconductor device measurement; ESR; MOS devices; MOSFET; Si-SiO2; defect density; defect density levels; electrical measurements; electron spin resonance; gamma ray irradiation; medium energy proton bombardment; proton bombardment; Atomic measurements; Density measurement; Electric variables measurement; Extraterrestrial measurements; MOS devices; NASA; Paramagnetic resonance; Protons; Telephony; USA Councils;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159265
