Title :
Analysis of the proton induced permanent degradation in an optocoupler
Author :
Germanicus, R. ; Dusseau, L. ; Saigné, F. ; Barde, S. ; Ecoffet, R. ; Mion, O. ; Calvel, P. ; Fesquet, J. ; Gasiot, J.
Author_Institution :
Universiti Montpellier II, France
Abstract :
We have studied the effect of proton irradiation with energies from 21 MeV to 200 MeV on commercial optocouplers. The basic degradation mechanisms for such devices are reviewed. Our experimental results are described. Using the concept of displacement damage dose, we propose a new approach to analyze the results.
Keywords :
III-V semiconductors; elemental semiconductors; integrated optoelectronics; light emitting diodes; optical couplers; optical interconnections; photodiodes; phototransistors; proton effects; radiation hardening (electronics); silicon; 21 to 200 MeV; III-V semiconductor; LED emitter; Si; commercial optocouplers; degradation mechanisms; displacement damage dose; optocoupler; photodiode; proton induced permanent degradation; proton irradiation; review; silicon phototransistor; Aerospace industry; Degradation; Light emitting diodes; Low earth orbit satellites; Optoelectronic devices; Phototransistors; Protons; Semiconductor devices; Silicon; Space missions;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159274
