Title :
Comparison of the sensitivity to heavy ions of 0.25 μm bulk and SOI technologies
Author :
Gasiot, G. ; Ferlet-Cavrois, V. ; Roche, P. ; Flatresse, P. ; D´hose, C. ; Musseau, O. ; du Port de Poncharra, J.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
The sensitivity to heavy ions of non-hardened 0.25 μm Partially Depleted (PD) SOI and bulk technologies is studied with experiments, device and circuit simulations. Comparable threshold LET are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For non-hardened technologies, SOI is then less sensitive than bulk to heavy ions.
Keywords :
integrated circuit modelling; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; 0.25 μm bulk technologies; 0.25 mm; SOI technologies; Si-SiO2; circuit simulations; device simulations; saturated cross section; sensitivity to heavy ions; threshold LET; Circuit simulation; DH-HEMTs; Degradation; Immune system; Parasitic capacitance; Radiation hardening; Random access memory; Robustness; Silicon on insulator technology; Space technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159282
