High-flux and high-efficiency nitride-based light-emitting devices

Author

Gardner, N.F. ; Bhat, J. ; Collins, D. ; Cook, L. ; Craford, M.G. ; Fletcher, R.M. ; Grillot, P. ; Götz, W.K. ; Kueper, M. ; Khare, R. ; Kim, A. ; Krames, M.R. ; Harbers, G. ; Ludowise, M. ; Martin, P.S. ; Misra, M. ; Mueller, G. ; Mueller-Mach, R. ; Ruda

Author_Institution

Lumileds Lighting, San Jose, CA, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

641

Abstract

There are numerous materials challenges involved in the production of high-efficiency III-nitride lasers and LEDs, some of which can be mitigated by epitaxy and device physics. The lack of a suitable lattice-matched substrate for epitaxy of AlInGaN films results in high dislocation densities and a large amount of residual strain in the deposited films. The role of the dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density.

Keywords

III-V semiconductors; current density; gallium compounds; indium compounds; light emitting diodes; optical films; packaging; semiconductor device reliability; AlInGaN material system; InGaN quantum wells; InGaN-GaN; InGaN/GaN LEDs; epitaxy physics; high-efficiency III-nitride LEDs; high-efficiency III-nitride lasers; lattice-matched substrate; materials challenges; quantum efficiency; residual strain; Conductivity; Current density; Doping; Gallium nitride; Heterojunctions; Ionization; Light emitting diodes; Packaging; Piezoelectric polarization; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159469

Filename

1159469