Title :
High d/gamma ratio in 940nm two-waveguide asymmetric epitaxial structures
Author :
Petrescu-Prahova, Iulian ; Moritz, Tom ; Riordan, John
Author_Institution :
High Power Devices, North Brunswick, NJ, USA
Abstract :
d/gamma is the main parameter in designing high brightness diode lasers. The two-waveguide asymmetric structures consist of an active region waveguide that includes a QW and an optical trap on the n side of the active region. The radiation field is shared between these two waveguides and correspondingly its extent in the QW relative to its overall extent in the structure is diminished.
Keywords :
III-V semiconductors; brightness; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; refractive index; waveguide lasers; 940 nm; InGaAs; QW lasers; active region; active region waveguide; confinement factor; high brightness diode lasers; high d/gamma ratio; n side; optical trap; optical wall; p cladding refractive index; radiation field; two-waveguide asymmetric epitaxial structures; two-waveguide asymmetric structures; Attenuation; Current density; Electric resistance; Energy management; Resists; Temperature; Testing; Thermal management; Thermal resistance; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159471
