Asymmetric design of semiconductor laser diodes: thin p-clad and low divergence InGaAs/AlGaAs/GaAs devices

The asymmetric design of a semiconductor laser structure presented in this paper is based on the extension of the near field in the vertical direction (growth direction) preferentially on the n-side of the structure. P-type layers show lower mobility and higher optical losses than n-type layers. Thus the series resistance of the device and the internal losses would benefit from this approach. The vertical spot size is 0.8 μm, making the structures also suitable for high power operation. We give the refractive index profile and optical field distribution in the asymmetric structures.