Title :
Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs
Author :
Song, H.W. ; Kwon, O.K. ; Han, W.S. ; Ju, Y.-G. ; Kim, J.-H. ; Shin, J.H. ; Yoo, B.S.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We demonstrate continuous wave operation of MOCVD-grown 1.55 μm buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 μm-diameter device are 3.5 mA and 1552 nm, respectively.
Keywords :
MOCVD; distributed Bragg reflector lasers; laser transitions; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.55 micron; 10 micron; 1552 nm; 3.5 mA; InAlGaAs-InAlAs; MOCVD grown 1.55 μm buried tunnel junction VCSEL; MOCVD twofold epitaxial growth; continuous wave operation; emission wavelength; room temperature; threshold current; Dielectrics; Electrons; MOCVD; Mirrors; Photonic band gap; Power generation; Pulse measurements; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159495
