DocumentCode
387439
Title
Passive mode locking of InAlGaAs 1.3 μm extended cavity lasers fabricated by quantum well intermixing
Author
Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; Thorpe, A. J Spring ; White, J.K.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
2
fYear
2002
fDate
10-14 Nov. 2002
Firstpage
716
Abstract
We report on the passive mode locking of InGaAlAs strained quantum well extended cavity lasers emitting at 1.3 μm. The passive section is made by quantum well intermixing.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; laser transitions; quantum well lasers; 1.3 micron; InAlGaAs 1.3 μm extended cavity lasers; InGaAlAs; InGaAlAs strained quantum well extended cavity lasers; passive laser mode locking; passive section; quantum well intermixing; Laser mode locking; Optical materials; Optical pulse generation; Photonic band gap; Protection; Quantum well lasers; Radio frequency; Rapid thermal annealing; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1159507
Filename
1159507
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