DocumentCode
387454
Title
UV/blue GaP avalanche photodiodes
Author
Beck, A.L. ; Collins, C.J. ; Wang, S. ; Yang, B. ; Campbell, J.C. ; Yuhus, A. ; Chen, A. ; Woodall, J.M.
Author_Institution
Texas Univ., Austin, TX, USA
Volume
2
fYear
2002
fDate
10-14 Nov. 2002
Firstpage
837
Abstract
Gallium phosphide, though most commonly used in emitters, has potential for use in both ultraviolet, blue, and blue green light detection applications from 250 nm to 500 nm. In GaP, shorter wavelengths have a higher absorption coefficient and consequently a shorter absorption length. Therefore, increased quantum efficiency in the UV spectrum hinges on these carriers reaching the active region prior to recombination. Thus, we implemented a recessed window structure to reduce the p-region thickness, resulting in increased quantum efficiency at shorter wavelengths. An improved peak quantum efficiency of 38% occurs at ∼440 nm. It is also important to note the enhanced quantum efficiency at short wavelengths, especially those below the spectral range of the non-recessed devices.
Keywords
III-V semiconductors; avalanche photodiodes; gallium compounds; photodetectors; ultraviolet detectors; 250 to 500 nm; 440 nm; GaP; UV spectrum; UV/blue GaP avalanche photodiodes; absorption coefficient; active region; enhanced quantum efficiency; increased quantum efficiency; nonrecessed devices; p-region thickness; recessed window structure; recombination; shorter absorption length; spectral range; Avalanche breakdown; Avalanche photodiodes; Dark current; Electromagnetic wave absorption; Gallium nitride; Photonic band gap; Semiconductor device noise; Semiconductor lasers; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1159568
Filename
1159568
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