Impact of Frequency-Dependent and Nonlinear Parameters on Transient Analysis of Through Silicon Vias Equivalent Circuit

This paper introduces an equivalent circuit model for through silicon vias including the nonlinear effect of metal-oxide-semiconductor capacitance. This nonlinear effect is combined to the frequency-dependent via resistance and inductance, as well as capacitance and conductance of the silicon substrate for a transient analysis. The impact of frequency-dependent RLCG parameters and the nonlinear depletion capacitance on signal propagation, crosstalk and eye diagram is studied using the proposed equivalent circuit model.