Exposing Reliability/Performance Tradeoff in Non-Volatile Memories Through Erratic Bits Signature Classification

Author

Zambelli, Cristian ; Koebernik, G. ; Ullmann, R. ; Bauer, Matthias ; Tempel, G. ; Di Tano, Fabrizio ; Atti, Massimo ; Pistone, Francesco Paolo ; Siviero, Andrea ; Olivo, Piero

Author_Institution

Dipt. di Ing., Univ. degli Studi di Ferrara, Ferrara, Italy

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

66

Lastpage

73

Abstract

The erratic bits (EB) phenomenon in nonvolatile memory devices (NVMs) has been evidenced in several technologies as a main reliability detractor. Usually, this issue is handled by repair strategies, which spans from static redundancy to dynamic correction codes. This evidences a tradeoff in a reliability/performance domain that is due to the limitation in the repair resources amount and correction strength. In this paper, we expose this tradeoff in different NVM technologies such as embedded nor Flash and phase-change memory devices through accurate EB testing, signature classification procedure, and chip failure rate estimation.

Keywords

error correction codes; phase change memories; signal classification; NVM; dynamic correction codes; erratic bits signature classification; flash change memory devices; nonvolatile memory devices; phase-change memory devices; reliability detractor; static redundancy; Arrays; Maintenance engineering; Nonvolatile memory; Phase change materials; Redundancy; Erratic bits; error correction codes; performance; redundancy; reliability; semiconductor memories; trade-off;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2284639

Filename

6620934