Title :
Noise performance and bias-dependence of Si/SiGe HBT´s at microwave frequencies
Author :
Maio, B. Di ; Prima, F. Di
Author_Institution :
Lab. of Microwave Electron., Palermo Univ., Italy
Abstract :
The results of an investigation on the bias-dependence of the noise performance of Si/SiGe HBT´s over the 5-25 GHz frequency range are reported. The noise parameters /spl Gamma//sub o/ and R/sub n/ have been derived from a model analysis based on measurements of the device scattering parameters and minimum noise figure F/sub o/.. The noise behaviour of the HBT and its bias dependence is compared with that of low-noise HEMT´s and advanced polysilicon BJT´s previously characterised and modelled in our lab.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; silicon; 5 to 25 GHz; 5-25 GHz; Si-SiGe; Si/SiGe HBT; bias dependence; device scattering parameters; model analysis; noise figure; noise parameters;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
