DocumentCode
389015
Title
Superbroadband low-noise microwave FET amplifiers
Author
Shipunova, N.V. ; Kruchinin, I.V. ; Zaitsev, B.A.
Author_Institution
RPE Salut-25, Nizhny Novgorod, Russia
fYear
2001
fDate
14-14 Sept. 2001
Firstpage
121
Lastpage
122
Abstract
Described in this paper is a superbroadband low-noise microwave FET amplifier of hybrid-integral design. The amplifiers have demonstrated the low-noise figure of 6.0 - 7.0 dB at 20.0 - 25.0 dB gain, output power 35 mW (linear mode) in 1.0 - 18.0 GHz frequency band.
Keywords
environmental factors; field effect transistor circuits; integrated circuit noise; microwave amplifiers; microwave field effect transistors; radio receivers; 1 to 18 GHz; 1.0 GHz-18.0 GHz; 20 to 25 dB; 20.0 - 25.0 dB gain; 35 mW; 6 to 7 dB; climatic factors; microwave FET amplifier; noise figure 6.0 dB - 7.0 dB; output power 35 mW; ultrabroadband receivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173726
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