Title :
Superbroadband low-noise microwave FET amplifiers
Author :
Shipunova, N.V. ; Kruchinin, I.V. ; Zaitsev, B.A.
Author_Institution :
RPE Salut-25, Nizhny Novgorod, Russia
Abstract :
Described in this paper is a superbroadband low-noise microwave FET amplifier of hybrid-integral design. The amplifiers have demonstrated the low-noise figure of 6.0 - 7.0 dB at 20.0 - 25.0 dB gain, output power 35 mW (linear mode) in 1.0 - 18.0 GHz frequency band.
Keywords :
environmental factors; field effect transistor circuits; integrated circuit noise; microwave amplifiers; microwave field effect transistors; radio receivers; 1 to 18 GHz; 1.0 GHz-18.0 GHz; 20 to 25 dB; 20.0 - 25.0 dB gain; 35 mW; 6 to 7 dB; climatic factors; microwave FET amplifier; noise figure 6.0 dB - 7.0 dB; output power 35 mW; ultrabroadband receivers;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
