Title :
Some circuit aspects of low noise microwave amplifier design
Author :
Krutov, A.V. ; Mitlin, V.A. ; Rebrov, A.S.
Author_Institution :
FSUC SRC "Istok, Fryazino, Russia
Abstract :
Several techniques exist concerning the design of low-noise microwave amplifiers. Presented in this paper are the results of the design of low-noise microwave amplifier using GaAs Schottky barrier FETs. The possibility of the achievement of a minimum noise figure for different amplifiers is shown.
Keywords :
III-V semiconductors; MESFET circuits; circuit noise; gallium arsenide; microwave amplifiers; GaAs; GaAs MESFET; GaAs Schottky barrier FETs; low-noise microwave amplifiers; microwave LNA design; minimum noise figure;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
