Title :
Design and fabrication of low noise MODFET for 30-60 GHz band
Author :
Zubkov, A.M. ; Korablin, A.S. ; Matveyev, Y.A. ; Cherniavskiy, A.A. ; Dorofeyev, A.A.
Abstract :
Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.
Keywords :
high electron mobility transistors; microwave field effect transistors; semiconductor device noise; 3 to 60 GHz; HEMT; PHEMT; Schottky FET; design; electronic lithography; fabrication; microwave low-noise MODFET;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
