Title :
Microwave oscillators on the basis of silicon IMPATT diodes used in the mm-band integrated circuits
Author :
Konakova, R.V. ; Milenin, V.V. ; Voitsikhovskyi, D.I.
Author_Institution :
Inst. of Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine
Abstract :
We have developed, fabricated and tested an oscillator module of microstrip design on a silicon double-drift IMPATT diode. It has provided output power of /spl sim/40-50 mW in the 8 mm wavelength range. IMPATT diode design involves titanium nitride interstitial phases. This provided high quality and heat tolerance of ohmic contacts.
Keywords :
IMPATT oscillators; MIMIC; MMIC oscillators; elemental semiconductors; microstrip circuits; millimetre wave oscillators; ohmic contacts; silicon; 40 to 50 mW; 8 mm; IMPATT diodes; TiN; double-drift diode; heat tolerance; interstitial phases; microstrip design; microwave oscillators; mm-band integrated circuits; ohmic contacts; oscillator module; output power;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
