Title :
Investigation of nanocontact electron properties to the semiconductor islands
Author :
Vostokov, N.V. ; Dryakhlushin, V.F. ; Klimov, Alexander Yu ; Novikov, A.V. ; Khrykin, O.I. ; Shashkin, V.I.
Author_Institution :
Inst. for Phys. of Microstructures RAS, Nizhny Novgorod, Russia
Abstract :
Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.
Keywords :
Ge-Si alloys; III-V semiconductors; atomic force microscopy; carrier density; elemental semiconductors; gallium arsenide; indium compounds; island structure; nanotechnology; semiconductor junctions; semiconductor materials; silicon; GaAs surface; Ge/sub x/Si/sub 1-x/; GeSi-Si; InAs; InAs-GaAs; Si surface; atomic force microscopy; carrier concentration; charge distribution; conducting probe; current-voltage characteristics; nanocontact electron properties; semiconductor islands;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
