Title :
SHF-transistors parameters optimization by germanium doping of silicon monocrystal
Author :
Afanas´ev, V.V. ; Brinkevich, D.I. ; Korzhenevski, A.G. ; Prosolovich, V.S. ; Yankovski, Yu.N.
Author_Institution :
Byelorussian State Univ., Minsk, Belarus
Abstract :
Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.
Keywords :
MOSFET; elemental semiconductors; germanium; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor doping; silicon; silicon compounds; MOS structure; SHF transistor; Si-SiO/sub 2/:Ge; breakdown voltage; germanium doping; leakage current; parameter optimization; silicon monocrystal;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
