• DocumentCode
    389151
  • Title

    Electric field distribution in planar GaAs devices under backgating

  • Author

    Prokhorov, E.F. ; González-Hernández, J. ; Gorev, N.B. ; Kodzhespirova, I.F. ; Kovalenko, Yu.A. ; Privalov, E.N.

  • Author_Institution
    Laboratodo de Investigacion en Materiales, Unidad Queretaro, Mexico
  • fYear
    2001
  • fDate
    14-14 Sept. 2001
  • Firstpage
    494
  • Lastpage
    495
  • Abstract
    The distribution of the electric field in planar film-substrate GaAs devices under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a quasi-uniform electric field exceeding the threshold of N-type negative differential mobility.
  • Keywords
    III-V semiconductors; Schottky barriers; carrier density; doping profiles; gallium arsenide; thin film devices; GaAs; GaAs devices; N-type negative differential mobility; Schottky-type gate contact; backgating; doping density; free carrier density; notch parameters; planar film substrate; quasi-uniform electric field; threshold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-00-6
  • Type

    conf

  • Filename
    1173944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=389151