Title :
Electric field distribution in planar GaAs devices under backgating
Author :
Prokhorov, E.F. ; González-Hernández, J. ; Gorev, N.B. ; Kodzhespirova, I.F. ; Kovalenko, Yu.A. ; Privalov, E.N.
Author_Institution :
Laboratodo de Investigacion en Materiales, Unidad Queretaro, Mexico
Abstract :
The distribution of the electric field in planar film-substrate GaAs devices under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a quasi-uniform electric field exceeding the threshold of N-type negative differential mobility.
Keywords :
III-V semiconductors; Schottky barriers; carrier density; doping profiles; gallium arsenide; thin film devices; GaAs; GaAs devices; N-type negative differential mobility; Schottky-type gate contact; backgating; doping density; free carrier density; notch parameters; planar film substrate; quasi-uniform electric field; threshold;
Conference_Titel :
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-00-6
