Thermal interaction of semiconductor devices in multi-chip modules

Author

Ayadi, Moez ; Ammous, Anis ; Ounejjar, Youssef ; Sellami, Faycal

Author_Institution

Lab. d´´Electronique et des Technol. de l´´Inf. (LETI), Sfax, Tunisia

Volume

6

fYear

2002

fDate

6-9 Oct. 2002

Abstract

The thermal behavior of power modules is an important criterion for the design of cooling systems and for the optimum thermal structure of these modules. An important consideration for high power and high frequency design are the spacing between semiconductor devices, structure of the substrate and the influence of the boundary condition. In this paper we have studied the thermal behavior of power hybrid module. These devices are composed by one or several chips connected between them.

Keywords

cooling; finite element analysis; multichip modules; thermal management (packaging); thermal resistance; boundary condition; cooling systems; high frequency design; multi-chip modules; optimum thermal structure; power hybrid module; power modules; semiconductor devices; substrate; thermal behavior; thermal interaction; Circuit simulation; Heat sinks; Impedance; Insulated gate bipolar transistors; Numerical simulation; Resistance heating; Semiconductor devices; Substrates; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Man and Cybernetics, 2002 IEEE International Conference on

ISSN

1062-922X

Print_ISBN

0-7803-7437-1

Type

conf

DOI

10.1109/ICSMC.2002.1175606

Filename

1175606