Broad-band power amplifier with an improved doubly tapered periodic bandgap PBG structure for harmonic tuning

Author

Her, Man-Long ; Chiou, Yi-Chyun ; Wang, Yu-Zhen ; Wang, Yu-Lin ; Sun, Pou-Tou ; Kun-Ying Lin ; Wang, Chia-An ; Lin, Quei-Ming

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

1

fYear

2002

fDate

25-28 Nov. 2002

Firstpage

21

Abstract

We have designed and implemented three class A GaAs field-effect transistor (FET) power amplifiers. Two of these three cases have a 50 Ω microstrip line utilizing an improved doubly tapered and a singly tapered periodic bandgap (PBG) structure for harmonic tuning respectively, while the other has only a 50 Ω straight line. The doubly tapered PBG structure has more significantly improvement in output power and power added efficiency (PAE) than a singly tapered case and also has the ability to terminate the second and third harmonics. Measurement shows the improvement of output power and PAE with 0.5 dB and 4 % respectively by using a doubly PBG structure compared with a singly tapered one, and with 0.8 dB and 7 % improvement without utilizing a PBG structure.

Keywords

circuit tuning; energy gap; field effect transistor circuits; harmonics; microstrip lines; power amplifiers; wideband amplifiers; 50 ohm; FET power amplifiers; broadband power amplifier; class A amplifiers; doubly tapered periodic bandgap PBG structure; field-effect transistor power amplifiers; harmonic tuning; microstrip line; output power; power added efficiency; second harmonics; straight line; third harmonics; Circuits; FETs; Microstrip; Periodic structures; Photonic band gap; Power amplifiers; Power engineering and energy; Power generation; Power system harmonics; Propagation constant;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Systems, 2002. ICCS 2002. The 8th International Conference on

Print_ISBN

0-7803-7510-6

Type

conf

DOI

10.1109/ICCS.2002.1182429

Filename

1182429