Title :
Failure analysis of IGCTs (5SHX 08F4502) in series connection in three level VSI
Author :
Qingguang, Yu ; Wenhua, Liu ; Qiang, Song
Author_Institution :
FACTS Inst., Tsinghua Univ., Beijing, China
Abstract :
IGCTs (integrated gate commutated thyristors) was developed by ABB to be widely used in high voltage converters. IGCT also has been adopted in series to get higher output voltage of the converters. In this paper, failure analysis of IGCTs in series connection in three level VSI (voltage source inverter) was put forward, we share our experience, and discuss how to make full use of IGCTs.
Keywords :
MOS-controlled thyristors; failure analysis; invertors; 4.5 kV; 5SHX 08F4502 IGCT; 630 A; ABB; IGCT; failure analysis; high voltage converters; integrated gate commutated thyristors; output voltage; series connection; three level VSI; voltage source inverter; Commutation; Failure analysis; Heat sinks; IEEE members; Medium voltage; Packaging; Pulse width modulation; Pulse width modulation inverters; Thyristors; Water heating;
Conference_Titel :
TENCON '02. Proceedings. 2002 IEEE Region 10 Conference on Computers, Communications, Control and Power Engineering
Print_ISBN :
0-7803-7490-8
DOI :
10.1109/TENCON.2002.1182755
