Tuning the Magnetization Dynamics in Sputtered ${\hbox {Co}}_{2}{\hbox {FeAl}}_{0.5}{\hbox {Si}}_{0.5}$ Heusler Alloy Thin Film by Gas Pressure

The influences of sputtering gas pressure on the high frequency magnetization dynamics properties of sputtered Co₂FeAl_0.5Si_0.5 (CFAS) Heusler alloy thin films have been systematic studied. Results show that the surface roughness, grain size, anisotropy field and dynamic magnetic properties can be tailored by changing sputtering gas pressures. The inhomogeneous linewidth broadening of the sputtered CFAS Heusler thin films is monotonously enhanced with the pressure increasing, similar as with the anisotropy field. A low value intrinsic damping parameter is extracted as 0.0073 with a low sputtering pressure, 1.58 ×10^-4 mbar. The intrinsic damping parameter increases monotonously up to 0.0122 with the pressure increasing. The high tunability of the damping constant indicates that controlling the sputtering gas pressure could be an effective method to tune the magnetization dynamics in sputtered CFAS thin film.