Title :
Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers
Author :
Wuen, Wen-Shen ; Wen, Kuei-Ann
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The paper presents a dual-band switchable low noise amplifier implemented in 0.25-μm CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.
Keywords :
CMOS analogue integrated circuits; radio receivers; radiofrequency amplifiers; wireless LAN; 0.25 micron; 17 dB; 2.5 V; 3.5 dB; 5 GHz; 9.5 mA; CMOS technology; PMOS capacitor; dual-band switchable low-noise amplifier; inductive load; radio receiver; wireless local area network; CMOS technology; Capacitors; Dual band; Frequency; Gain; Low-noise amplifiers; Noise figure; Paper technology; Receivers; Wireless LAN;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1186847
