Title :
Comments to "A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors"
Author :
Taur, Yuan ; Han-Ping Chen ; Yu Yuan ; Bo Yu
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
In this paper, we have found the missing factor in the derivation to the transconductance model [1] and reaffirmed that, when all the physics are taken into account, the distributed admittance model published in [2] is correct.
Keywords :
III-V semiconductors; MOS capacitors; high-k dielectric thin films; semiconductor device models; III-V/high-k MOS capacitors; border traps; distributed admittance model; distributive-transconductance model; Admittance; Electric potential; Electron traps; MOS capacitors; Numerical models; Semiconductor device modeling; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2283466
