• DocumentCode
    39178
  • Title

    Large Current GaAs PCSS Triggered by a Laser Diode

  • Author

    Shi, W. ; Hao, Nana ; Fu, Zhihong ; Li, Meng ; Ma, Chengbin ; Gui, Huaimeng ; Wang, Lingfeng ; Jiang, Hongbo ; Cao, Jun

  • Author_Institution
    Department of Applied Physics, Xi??an University of Technology, Xi’an, China
  • Volume
    26
  • Issue
    21
  • fYear
    2014
  • fDate
    Nov.1, 1 2014
  • Firstpage
    2158
  • Lastpage
    2161
  • Abstract
    We have fabricated a 2-mm gap semi-insulating GaAs photoconductive semiconductor switch (PCSS), and obtained a 1.45-kA large current under a bias voltage of 6 kV when the PCSS was triggered by a 4- (\\mu ) J commercial laser diode. An RLC transient circuit model was employed to get the electrical properties of the PCSS in the transient discharge process. The reason for the switch exiting from nonlinear operating mode was that the electric field across the switch dropped below the lock-on field. This letter shows the attractive prospect of a low-cost compact high-power pulse source with the GaAs PCSS.
  • Keywords
    Diode lasers; Gallium arsenide; Optical switches; Photoconductivity; RLC circuits; Transient analysis; Photoconductive semiconductor switch (PCSS); laser diode (LD); nonlinear mode;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2014.2349576
  • Filename
    6881654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=39178