DocumentCode :
39178
Title :
Large Current GaAs PCSS Triggered by a Laser Diode
Author :
Shi, W. ; Hao, Nana ; Fu, Zhihong ; Li, Meng ; Ma, Chengbin ; Gui, Huaimeng ; Wang, Lingfeng ; Jiang, Hongbo ; Cao, Jun
Author_Institution :
Department of Applied Physics, Xi??an University of Technology, Xi’an, China
Volume :
26
Issue :
21
fYear :
2014
fDate :
Nov.1, 1 2014
Firstpage :
2158
Lastpage :
2161
Abstract :
We have fabricated a 2-mm gap semi-insulating GaAs photoconductive semiconductor switch (PCSS), and obtained a 1.45-kA large current under a bias voltage of 6 kV when the PCSS was triggered by a 4- 
J commercial laser diode. An RLC transient circuit model was employed to get the electrical properties of the PCSS in the transient discharge process. The reason for the switch exiting from nonlinear operating mode was that the electric field across the switch dropped below the lock-on field. This letter shows the attractive prospect of a low-cost compact high-power pulse source with the GaAs PCSS.
Keywords :
Diode lasers; Gallium arsenide; Optical switches; Photoconductivity; RLC circuits; Transient analysis; Photoconductive semiconductor switch (PCSS); laser diode (LD); nonlinear mode;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2349576
Filename :
6881654
Link To Document :
