Design of RF integrated inductors by geometric scaling

This paper presents research related to the design and characterization of geometrically scaled monolithic RF inductors. The geometries of on chip passive RF components are scaled-up by a factor ´a´. The scaled model is characterized at a scaled-down frequency range by a factor ´1/a´. The scattering parameters extracted from the scaled model reflect the behavior of the original on-chip model at the original frequency range. Two port scattering parameter measurement results of the scaled model show agreement with the simulated original model using an Electromagnetic (EM) simulator with good accuracy.