DocumentCode
391833
Title
Technological limitations of monolithic high-frequency oscillators in MOS and bipolar processes
Author
Thoka, Sreenath ; Su, Chao ; Geiger, Randall
Author_Institution
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Volume
3
fYear
2002
fDate
4-7 Aug. 2002
Abstract
The relationship between the maximum oscillation frequency and the process parameter fT for two useful classes of VCOs ( ring oscillators and LC-tank oscillators) is developed. Results show that the oscillation frequency of a class of LC-tank oscillators can be substantially higher than fT if high-Q inductors are used.
Keywords
MMIC oscillators; MOS analogue integrated circuits; bipolar analogue integrated circuits; integrated circuit modelling; negative resistance circuits; voltage-controlled oscillators; 5 to 10 GHz; LC-tank oscillators; MOS process; bipolar process; high-Q inductors; maximum oscillation frequency; monolithic HF oscillators; negative resistance oscillator; oscillator technological limitations; process parameters; ring oscillators; Capacitance; Chaotic communication; Clocks; Frequency; Germanium silicon alloys; Inductors; MOSFET circuits; Ring oscillators; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN
0-7803-7523-8
Type
conf
DOI
10.1109/MWSCAS.2002.1187097
Filename
1187097
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