Title :
A 5-GHz LNA for wireless LAN application based on 0.5 μm SiGe BiCMOS
Author :
Kim, Hye-Ryoung ; Lee, Sang-Gug
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea
Abstract :
This paper presents a 5-GHz band LNA using 0.5 μm SiGe BiCMOS technology for wireless LAN application. To improve gain and linearity, the proposed LNA adopted a unique combination of inter-stage series resonance and linearity-enhancing bias circuit. The proposed LNA shows power gain of 18.3 dB, a noise figure 1.65 dB, and IIP3-3.95 dBm while dissipating 11 mA from a 3 V power supply, based on simulation.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; integrated circuit noise; mobile computing; transceivers; wireless LAN; 0.5 micron; 1.65 dB; 11 mA; 18.3 dB; 3 V; 5 GHz; BiCMOS; LNA; SiGe; gain; inter-stage series resonance; linearity; linearity-enhancing bias circuit; power gain; wireless LAN application; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Linearity; Noise figure; Power supplies; RLC circuits; Resonance; Silicon germanium; Wireless LAN;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187632
