27 GHz monolithically integrated VCO with frequency divider in SiGe bipolar technology

Author

Ritzberger, Günter ; Bock, Josef

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

62

Lastpage

65

Abstract

This paper presents a monolithic voltage-controlled oscillator with static frequency divider in a pre-production 0.4 μm SiGe bipolar technology for broadband communication applications. The voltage-controlled oscillator operates from 21 GHz to 27 GHz. The division ratio of the static frequency divider is 16. The circuit consumes 500 mW from the 5 V supply including the two output buffers.

Keywords

Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; bipolar MMIC; frequency dividers; semiconductor materials; voltage-controlled oscillators; 0.4 micron; 21 to 27 GHz; 5 V; 500 mW; SiGe; SiGe bipolar technology; broadband communication; monolithic integration; static frequency divider; voltage controlled oscillator; Circuits; Differential amplifiers; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Phase detection; Phase frequency detector; Phase locked loops; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187635

Filename

1187635