DocumentCode :
392609
Title :
Seebeck coefficient of p-type PbTe/PbEuTe quantum well structures
Author :
Sur, I. ; Casian, A. ; Balandin, A.A. ; Dashevsky, Z. ; Kantser, V. ; Scherrer, H.
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
288
Lastpage :
291
Abstract :
The electrical conductivity σ and Seebeck coefficient S are calculated in [111] oriented p-type PbTe/PbEuTe quantum well (QW) structures using the iterative method for solving the kinetic equations. The carrier scattering by optical and acoustical phonons is considered. The dependencies of σ and S vs. well width d and hole concentration p are studied. It is shown that for small d=20Å the energy gap between oblique L and Σ valleys becomes small and the Seebeck coefficient achieves large values even at very high carrier concentration of p∼1020 cm-3. The presence of high mobility degenerate holes in the longitudinal subbands L valley leads to a small decrease of S. The obtained values of the conductivity and thermoelectric power agree well with the experimental data in the concentration range of p<1020 cm-3.
Keywords :
IV-VI semiconductors; Seebeck effect; electrical conductivity; energy gap; europium compounds; hole density; iterative methods; lead compounds; phonons; semiconductor quantum wells; thermoelectric power; 20 Å; PbTe-PbEuTe; Seebeck coefficient; carrier scattering; electrical conductivity; energy gap; high mobility degenerate holes; hole concentration; iterative method; kinetic equations; p-type PbTe/PbEuTe quantum well structures; phonons; thermoelectric power; well width; Acoustic scattering; Brillouin scattering; Conducting materials; Lattices; Optical scattering; Particle scattering; Phonons; Thermal conductivity; Thermoelectric devices; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190321
Filename :
1190321
Link To Document :
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