DocumentCode :
392633
Title :
Narrower efficiency distribution for multicrystalline silicon solar cells by double-side emitter diffusion
Author :
Goris, M.J.A.A. ; Weeber, A.W. ; Bultman, J.H.
Author_Institution :
ECN Solar Energy, Petten, Netherlands
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
379
Lastpage :
382
Abstract :
Multicrystalline silicon solar cells produced with double side emitter diffusion are compared with single side emitter diffused cells. Double side emitter diffusion yields in improved current and voltage for all materials of four multicrystalline silicon wafer suppliers. Poor quality material improves approximately 3% more than good quality material. This results in a narrower efficiency distribution over all material. No relation between substitutional carbon concentration, interstitial oxygen concentration and FeB concentration and improved current due to double side diffusion was found.
Keywords :
carbon; diffusion; elemental semiconductors; interstitials; oxygen; silicon; solar cells; FeB concentration; Si:C; Si:O; double-side emitter diffusion; improved current; improved voltage; interstitial oxygen concentration; multicrystalline Si solar cells; narrower efficiency distribution; single side emitter diffused cells; substitutional carbon concentration; Analysis of variance; Carbon dioxide; Etching; Firing; Iron; Manufacturing; Photovoltaic cells; Silicon; Solar energy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190538
Filename :
1190538
Link To Document :
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