DocumentCode :
392637
Title :
Current-induced performance degradation of Cz-Si solar cells
Author :
Hashigami, H. ; Itakura, Y. ; Saitoh, T.
Author_Institution :
Tokyo Univ. of Agric. & Technol., Japan
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
426
Lastpage :
429
Abstract :
B-O-correlated performance degradation in Cz-Si solar cells has been investigated. The current is injected into solar cells in comparison with the light-induced cell performance degradation. A significant difference is found between current injection and illumination in low-injection region. The degradation in high injection region is explained by lifetime degradation calculated from Jsc-V curves. A significant degradation is a rapid performance drop at the initial decay. V recovery property is found to be processed single-exponentially in spite of the multi-exponential degradation.
Keywords :
charge injection; elemental semiconductors; semiconductor device measurement; silicon; solar cells; B-O-correlated performance degradation; Cz-Si solar cells; Si; current injection; current-induced performance degradation; lifetime degradation; low-injection region; Annealing; Boron; Data analysis; Degradation; Equations; Lighting; Metastasis; Monitoring; Photovoltaic cells; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190550
Filename :
1190550
Link To Document :
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