Title :
Copper indium diselenide solar cells prepared by electrodeposition
Author :
Guimard, D. ; Grand, P.P. ; Bodereau, N. ; Cowache, P. ; Guillemoles, J.F. ; Lincot, D. ; Taunier, S. ; Ben Farah, M. ; Mogensen, P.
Author_Institution :
Lab. d´´Electrochimie et de Chimie Analytique, Paris, France
Abstract :
Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8 % were found (total area, 100 MW/cm2, no AR coating) for small area devices (0.06 cm2). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5×5 cm2 substrates (average efficiency of 4.5 %).
Keywords :
adhesion; copper compounds; current density; density; electrodeposition; indium compounds; recrystallisation; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 4.5 percent; 5 cm; 8.8 percent; CIS solar cell; CdS layers; Cu(InGa)Se2-CdS-ZnO; CuInSe2; CuInSe2 layers; ZnO layers; active layer; adhesion properties; composition; copper indium diselenide solar cells; density; efficiencies; electrodeposition; recrystallisation; small area devices; substrates; total area; Adhesives; Annealing; Coatings; Computational Intelligence Society; Copper; Current density; Indium; Photovoltaic cells; X-ray scattering; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190659
