Title :
High efficiency thin film silicon solar cell and module
Author :
Yamamoto, Kenji ; Nakajima, Akihiko ; Yoshimi, Masashi ; Sawada, Toru ; Fukuda, Susumu ; Hayashi, Katsuhiko ; Suezaki, Takashi ; Ichikawa, Mitsuru ; Koi, Yohei ; Goto, Masahiro ; Takata, Hironon ; Tawada, Yuko
Author_Institution :
Kaneka Corp., Shiga, Japan
Abstract :
An initial efficiency of 14.5% (Jsc=14.4mA/cm2, Voc=1.41V, FF=71.9%) has been achieved for a-Si:H/transparent inter-layer/crystalline Si solar cell (total area of 1cm2). Both a-Si and crystalline Si films were fabricated by plasma chemical vapor deposition at low temperature. The short circuit current (Jsc) was enhanced by the introduction of transparent interlayer without increasing the thickness of a-Si:H layer. An initial aperture efficiency of 12.3% has been achieved for 910×455mm2 a-Si/crystalline Si thin film integrated solar cell module. Reasonably high deposition rate of 11 A/s for the deposition of crystalline Si for 1×1m2 area has been achieved. By applying a deposition conditions of this high deposition rate, an initial aperture efficiency of 11.2% has been obtained above sized Si stacked solar cell module.
Keywords :
elemental semiconductors; plasma CVD coatings; semiconductor device measurement; silicon; solar cells; transparency; 11.2 percent; 12.3 percent; 14.5 percent; Si; Si stacked solar cell module; a-Si:H/transparent inter-layer/crystalline Si solar cell; efficiency; plasma chemical vapor deposition; short circuit current; thin film silicon solar cell; transparent interlayer; Apertures; Chemical vapor deposition; Crystallization; Photovoltaic cells; Plasma chemistry; Plasma temperature; Semiconductor films; Semiconductor thin films; Short circuit currents; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190800