Polycrystalline silicon on glass by aluminum-induced crystallization

Author

Gall, S. ; Muske, M. ; Sieber, I. ; Schneider, J. ; Nast, O. ; Fuhs, W.

Author_Institution

Hahn-Meitner-Inst., Berlin, Germany

fYear

2002

fDate

19-24 May 2002

Firstpage

1202

Lastpage

1205

Abstract

We prepared thin polycrystalline silicon (poly-Si) films on glass by an aluminum-induced layer exchange (ALILE) process which is based on the aluminum-induced crystallization (AlC) of amorphous silicon (a-Si). During the ALILE process a glass/Al/a-Si stack is transformed into a glass/poly-Si/Al+Si structure. We investigated both the growth of the poly-Si layer and the final Al+Si layer on top of the poly-Si layer. Furthermore, we carried out the ALILE process on large glass substrates and on metal-coated glass substrates.

Keywords

aluminium; amorphous semiconductors; crystallisation; elemental semiconductors; glass; semiconductor thin films; silicon; solar cells; ALILE process; SiO₂-Si-Si:Al; aluminum-induced crystallization; aluminum-induced layer exchange process; amorphous silicon; glass; poly-Si film; polycrystalline silicon; Amorphous silicon; Annealing; Artificial intelligence; Crystallization; Glass; Optical films; Optical microscopy; Photovoltaic cells; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190823

Filename

1190823