DocumentCode :
392671
Title :
Multicrystalline LLC-silicon thin film cells on glass
Author :
Andra, Gudrun ; Bergmann, Joachim ; Ose, Ekkehart ; Schmidt, Manfred ; Sinh, Ngo Duong ; Falk, Fritz
Author_Institution :
Inst. fur Physikalische Hochtechnologie e.V, Jena, Germany
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1306
Lastpage :
1309
Abstract :
In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 μm were deposited on uncoated glass by layered laser crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition chamber. A 400 nm thick seed layer simultaneously acting as transparent electrode was crystallized by scanning an Ar+-laser beam. Epitaxial thickening by applying repeated pulses of an KrF excimer laser was performed during further a-Si:H deposition. p+-p-n+ cells with 3 μm thick absorber without reflector and without antireflection coating showed Voc = 425 mV, Isc = 9.8 mA/cm2, FF = 55%, and n = 2.3%.
Keywords :
crystallisation; crystallites; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor device measurement; silicon; solar cells; 10 to 100 micron; 2.3 percent; 3 micron; PECVD deposition; Si:H; SiO2; crystallites; epitaxial thickening; glass; layered laser crystallization; multicrystalline LLC-silicon thin film cells; p+-p-n+ cells; Argon; Crystallization; Electrodes; Glass; Photovoltaic cells; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190849
Filename :
1190849
Link To Document :
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