• DocumentCode
    393187
  • Title

    Oriented lithium niobate layers transferred on 4" [100] silicon wafer for RF SAW devices

  • Author

    Solal, M. ; Pastureaud, Th ; Ballandras, S. ; Aspar, B. ; Biasse, B. ; Daniau, W. ; Hodé, J.M. ; Calisti, S. ; Laude, V.

  • Volume
    1
  • fYear
    2002
  • fDate
    8-11 Oct. 2002
  • Firstpage
    131
  • Abstract
    A technological process has been developed to achieve a thin oriented Lithium Niobate layer deposited on [100] Si wafers for the fabrication of SAW devices integrable on silicon. The theoretical analysis of the elastic wave assumed to propagate on such combination of material is first reported. Technological aspects are then briefly described. Finally, experimental results are presented and compared to the state of art.
  • Keywords
    elemental semiconductors; lithium compounds; piezoelectric materials; silicon; surface acoustic wave filters; 4 in; 4" [100] Si wafer; LiNbO3; RF SAW devices; Si; elastic wave; oriented lithium niobate layers; Fabrication; Green\´s function methods; Lithium niobate; Piezoelectric films; Propagation losses; Radio frequency; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-7582-3
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2002.1193369
  • Filename
    1193369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=393187