Title :
Design of SAW amplifier with distributed semiconductor transistor
Author :
Aoki, Y. ; Yoshida, H. ; Koh, K. ; Kaneshiro, C. ; Hohkawa, K.
Author_Institution :
Adv. Technol. Res. center, Kanagawa Inst. of Technol., Japan
Abstract :
In this paper, we present the design of a novel SAW amplifier that consists of multi-stripe tapping electrodes and a GaAs FET amplifier. Using a general circuit simulator, we analyse the frequency characteristics of the SAW amplifier. The SAW amplifier with differential operation shows wideband frequency characteristics better than that without differential operation. We also investigate the frequency characteristics by changing tapping electrode pitches and the impedance matching condition between SAW and FET. These results confirm that the SAW amplifier is applicable to wideband communication systems and signal processing systems.
Keywords :
III-V semiconductors; circuit simulation; distributed amplifiers; field effect transistor circuits; gallium arsenide; impedance matching; radiofrequency amplifiers; surface acoustic wave devices; wideband amplifiers; GaAs; GaAs FET; SAW amplifier; circuit simulator; communication systems; design; differential operation; distributed semiconductor transistor; frequency characteristics; impedance matching condition; multi-stripe tapping electrodes; signal processing system; tapping electrode pitches; wideband frequency characteristics; Analytical models; Broadband amplifiers; Circuits; Distributed amplifiers; Electrodes; FETs; Frequency; Gallium arsenide; Semiconductor optical amplifiers; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1193397
