Electrical parasitic modeling in SAW RF filters

Parasitic phenomena affecting the frequency response of SAW RF filters are modeled with a variety of techniques. Inter-IDT electrode capacitance is modeled with a two-dimensional charge distribution analysis. Capacitance among arbitrary die structures, including bus bars and bond pads, is modeled with an electrostatic boundary element formulation. Inductance and resistance of these structures are modeled using a filament mesh analysis technique under the magnetoquasistatic approximation.