Title :
Nonlinear SAW propagation in thin-film systems with residual stress
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
The propagation of small- and finite-amplitude surface acoustic waves (SAWs) in stressed thin-film systems is modeled. Results are presented for an initially monofrequency, plane wave traveling in the [100] direction of systems composed of either Ge (loading) or diamond (stiffening) epitaxial films under compressive stress on an unstressed [001] Si substrate. Cases are considered for both thinner and thicker films in terms of their ratios of dispersion to nonlinearity ratios. For finite-amplitude waves, comparison between unstressed and stressed films indicates that larger effects occur at longer propagation distances and for higher harmonics.
Keywords :
acoustic wave propagation; diamond; elemental semiconductors; germanium; internal stresses; piezoelectric semiconductors; piezoelectric thin films; semiconductor epitaxial layers; silicon; surface acoustic waves; C; Ge; Ge epitaxial films; Si; compressive stress; diamond epitaxial films; finite-amplitude surface acoustic waves; initially monofrequency plane wave; nonlinear SAW propagation; small-amplitude surface acoustic waves; thin-film systems with residual stress; unstressed [001] Si substrate; Acoustic propagation; Capacitive sensors; Dispersion; Equations; Frequency; NIST; Residual stresses; Substrates; Surface acoustic waves; Transistors;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1193433
