Fabrication of Fe/MgO/Gd Magnetic Tunnel Junctions

Author

Takahashi, Y.T. ; Shiota, Y. ; Miwa, Shinsuke ; Bonell, F. ; Mizuochi, Norikazu ; Shinjo, T. ; Suzuki, Yuya

Author_Institution

Div. of Mater. Phys. Grad., Osaka Univ., Toyonaka, Japan

Volume

49

Issue

7

fYear

2013

fDate

Jul-13

Firstpage

4417

Lastpage

4420

Abstract

We fabricated Fe/MgO/Gd magnetic tunnel junctions (MTJs) on a MgO(100) substrate by molecular beam epitaxy. Gd thin films were deposited onto an MgO(100) single crystal barrier. Crystal structure and magnetization of the Gd layers were studied by in situ reflection high-energy electron diffraction and a SQUID (superconducting quantum interference device) magneto-meter, respectively. We observed magnetoresistance in the MTJs, which was attributed to the spin-polarized tunneling between the Fe and Gd films.

Keywords

gadolinium; iron; magnesium compounds; magnetic epitaxial layers; magnetic tunnelling; magnetisation; magnetoresistance; molecular beam epitaxial growth; reflection high energy electron diffraction; Fe-MgO-Gd; MgO; SQUID; crystal structure; magnetic tunnel junctions; magnetization; magnetoresistance; molecular beam epitaxy; reflection high-energy electron diffraction; single crystal barrier; spin-polarized tunneling; superconducting quantum interference device; thin films; Iron; Junctions; Magnetic tunneling; Magnetization; Tunneling magnetoresistance; Voltage measurement; Gadolinium (Gd); magnetic tunnel junctions; magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2247745

Filename

6559029