Title :
Fabrication of Fe/MgO/Gd Magnetic Tunnel Junctions
Author :
Takahashi, Y.T. ; Shiota, Y. ; Miwa, Shinsuke ; Bonell, F. ; Mizuochi, Norikazu ; Shinjo, T. ; Suzuki, Yuya
Author_Institution :
Div. of Mater. Phys. Grad., Osaka Univ., Toyonaka, Japan
Abstract :
We fabricated Fe/MgO/Gd magnetic tunnel junctions (MTJs) on a MgO(100) substrate by molecular beam epitaxy. Gd thin films were deposited onto an MgO(100) single crystal barrier. Crystal structure and magnetization of the Gd layers were studied by in situ reflection high-energy electron diffraction and a SQUID (superconducting quantum interference device) magneto-meter, respectively. We observed magnetoresistance in the MTJs, which was attributed to the spin-polarized tunneling between the Fe and Gd films.
Keywords :
gadolinium; iron; magnesium compounds; magnetic epitaxial layers; magnetic tunnelling; magnetisation; magnetoresistance; molecular beam epitaxial growth; reflection high energy electron diffraction; Fe-MgO-Gd; MgO; SQUID; crystal structure; magnetic tunnel junctions; magnetization; magnetoresistance; molecular beam epitaxy; reflection high-energy electron diffraction; single crystal barrier; spin-polarized tunneling; superconducting quantum interference device; thin films; Iron; Junctions; Magnetic tunneling; Magnetization; Tunneling magnetoresistance; Voltage measurement; Gadolinium (Gd); magnetic tunnel junctions; magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2013.2247745
