Detailed investigation of the transient local tunneling in gate oxides

Author

Beug, M.F. ; Ferretti, R. ; Hofmann, K.R.

Author_Institution

Inst. for Semicond. Devices & Electron. Mater., Hannover Univ., Germany

fYear

2003

fDate

30 March-4 April 2003

Firstpage

116

Lastpage

120

Abstract

A detailed investigation of the local transient tunneling currents due to substrate- and gate-near traps generated by Fowler-Nordheim stress in nitrided oxide MOS structures has been performed. We demonstrate that for the correct interpretation of these transient SILC currents it is essential to include the effects of the substrate and poly-Si capacitances. This leads to gate voltage dependent weighting factors, which relate the measured current transients to the local trap tunnel currents near the substrate and the gate. By a combination of these measurements with transient capacitance measurements it is possible to separately determine the local tunnel currents and thus densities of traps generated close to the substrate and to the gate.

Keywords

EPROM; MOS capacitors; capacitance; interface states; leakage currents; semiconductor device reliability; transients; tunnelling; EEPROM reliability; Fowler-Nordheim stress; MOS capacitors; Si-SiO₂; Si-SiON; current transients; gate oxides; gate voltage dependent weighting factors; local transient tunneling currents; local trap tunnel currents; nitrided oxide MOS structures; poly-Si capacitance; substrate capacitance; substrate traps; transient SILC currents; transient capacitance; Capacitance measurement; Current measurement; Electron traps; Fault location; Performance evaluation; Semiconductor devices; Stress; Substrates; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197730

Filename

1197730