Title :
Real case studies of failure mechanisms for Cu trench electromigration
Author :
Lai, J.B. ; Yang, J.L. ; Yang, H.W. ; Hwang, R.L. ; Su, David ; Chuang, Harry ; Huang, AndY S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fDate :
30 March-4 April 2003
Abstract :
The morphology of voids formed during electromigration testing of Cu lines provides important clues to solve process-related problems. In this work, deep and isolated voids are found in samples with shorter life times, while long and shallow voids are found in the ones with longer life times. Serious overetching of the SiN trench etching stop layer is found in early failures and result in nucleation of voids from the sidewalls of trenches.
Keywords :
copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; voids (solid); Cu; Cu trench electromigration; SiN; SiN trench etching stop layer; case studies; deep isolated voids; dual damascene processes; early failures; electromigration testing; failure analysis results; failure mechanisms; long shallow voids; overetching; single damascene processes; trench sidewalls; void morphology; void nucleation; Computer aided software engineering; Copper; Electromigration; Etching; Failure analysis; Scanning electron microscopy; Silicon compounds; Surface morphology; Testing; Transmission electron microscopy;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197823
