Title :
Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors
Author :
Ershov, M. ; Lindley, R. ; Saxena, S. ; Shibkov, A. ; Minehane, S. ; Babcock, J. ; Winters, S. ; Karbasi, H. ; Yamashita, T. ; Clifton, P. ; Redford, M.
Author_Institution :
PDF Solutions, San Jose, CA, USA
fDate :
30 March-4 April 2003
Abstract :
We report a new effect - relaxation of pMOSFET degradation due to negative bias temperature instability (NBTI). "Apparent" NBTI degradation is reduced ("recovered") by as much as 30-50% after stress interruption, which can increase device lifetime by a factor of 10-30. Some problems associated with extrapolation of degradation with respect to time and stress voltage are also discussed.
Keywords :
CMOS integrated circuits; MOSFET; extrapolation; life testing; semiconductor device reliability; semiconductor device testing; transient analysis; CMOS technologies; NBTI lifetime estimation; characterization methodology; device lifetime; negative bias temperature instability; pMOS transistors; pMOSFET degradation relaxation; reliability concern; stress interruption; stress voltage; time extrapolation; transient effects; voltage extrapolation; CMOS technology; Degradation; Life estimation; Lifetime estimation; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197828
