DocumentCode :
39447
Title :
Passing the Plateau of Productivity: Development of RFSOI Technologies on HR Silicon Substrates for Reconfigurable Wireless Solutions
Author :
Costa, Julio
Author_Institution :
RFMD, Greensboro, NC, USA
Volume :
15
Issue :
7
fYear :
2014
fDate :
Nov.-Dec. 2014
Abstract :
Products designed with RFSOI on HR silicon for the cellular handset industry are being deployed in large volumes by the leading RF FE providers. These consist of highly integrated RF power switches, RF tuners, and other types of RF circuit blocks. The technologies are available in several different foundries, and the volumes are running in the tens of thousands of wafers per month. The drive for improved linearity needed for LTE 4G systems, in particular CA, will continue to push these technologies to improve their respective figures of merit for continuous leadership in the RF FE. RFSOI on HR silicon is the leading switching technology in handsets today and is poised to continue its dominance for the next decade.
Keywords :
4G mobile communication; Long Term Evolution; foundries; productivity; silicon-on-insulator; HR silicon substrates; LTE 4G systems; RF FE provider; RF circuit blocks; RF power switches; RF tuners; RFSOI technology; cellular handset industry; continuous leadership; foundry; productivity; reconfigurable wireless solutions; switching technology; Capacitors; MIM capacitors; Radio frequency; Substrates;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2014.2356152
Filename :
6954655
Link To Document :
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