DocumentCode :
39498
Title :
Humidity-to-Frequency Sensor in CMOS Technology With Wireless Readout
Author :
Cirmirakis, Dominik ; Demosthenous, Andreas ; Saeidi, Nooshin ; Donaldson, Nick
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Volume :
13
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
900
Lastpage :
908
Abstract :
A remotely powered microsystem for humidity measurement is presented. The core of the active transponder consists of a humidity-to-frequency chip fabricated in a standard complementary metal-oxide-semiconductor (CMOS) technology, which contains both the humidity sensor and the readout circuit. The sensor is constructed using the polyimide passivation layer and the top metal layer available in the technology used. Power and data transmissions, to and from the chip, respectively, use the same pair of inductively coupled coils with a 13.56 MHz carrier. The humidity readout is transmitted by load shift keying to the external circuit. The chip is fabricated with commercial 0.6-μm CMOS technology and occupies an area of 4.8 mm2. The sensor´s capacitance exhibited good linearity against relative humidity (RH) levels from 15% to 85%. The normalized sensitivity is 0.073% per %RH at 35°C. The circuit level calibration limited spread from process and mismatch variations to about 10%. The chip has a total power consumption of 1.39 mW. The device has two purposes; either as a stand-alone wireless humidity sensor or to evaluate the hermeticity of packages, such as in biomedical implants.
Keywords :
CMOS integrated circuits; calibration; capacitance; coils; digital readout; humidity measurement; humidity sensors; inductive power transmission; passivation; polymers; transponders; wireless sensor networks; CMOS technology; RH; capacitance; circuit level calibration; complementary metal-oxide-semiconductor; data transmission; frequency 13.56 MHz; humidity measurement; humidity readout; humidity sensor; humidity-to-frequency sensor; inductively coupled coil; metal layer; microfabrication; package hermeticity; polyimide passivation layer; power 1.39 mW; power transmission; relative humidity; remotely powered microsystem; size 0.6 mum; stand-alone wireless humidity sensor; temperature 35 degC; transponder; wireless readout circuit; CMOS integrated circuits; CMOS technology; Humidity; Moisture; Sensors; Transistors; Voltage control; Capacitive sensor; complementary metal–oxide–semiconductor (CMOS) technology; humidity sensor; humidity-to-frequency circuit; load shift keying (LSK); polyimide; telemetry; wireless device;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2012.2217376
Filename :
6296673
Link To Document :
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