Design of Dual-Band ESD Protection for 24-/60-GHz Millimeter-Wave Circuits

Author

Li-Wei Chu ; Chun-Yu Lin ; Ming-Dou Ker

Author_Institution

Dept. of Photonics & the Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

13

Issue

1

fYear

2013

fDate

Mar-13

Firstpage

110

Lastpage

118

Abstract

To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

Keywords

CMOS integrated circuits; MMIC amplifiers; electrostatic discharge; elemental semiconductors; field effect MIMIC; inductors; low noise amplifiers; semiconductor diodes; silicon; thyristors; LNA; PMOS; Si; circuit designers; diode; dual-band ESD protection cell; electrostatic discharge; frequency 24 GHz; frequency 60 GHz; human-body-model ESD robustness; inductors; low-noise amplifier; millimeter-wave circuits; nanoscale CMOS technology; silicon-controlled rectifier; voltage 2 kV; Dual band; Electrostatic discharges; Materials; Resonant frequency; Robustness; Stress; Thyristors; CMOS; dual-band; electrostatic discharge (ESD) protection; millimeter-wave (MMW); radio frequency (RF);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2012.2217498

Filename

6296697